Silicon carbide semiconductor technology is increasingly being used in high-end products like processors.
One of the key drivers of technology, especially for electronic devices, is the discovery of new materials that exhibit better properties. Component manufacturers, commercial research institutes, university laboratories, and governments are constantly looking for transformative materials to improve performance and/or reduce costs. One of the fruits of these efforts is silicon carbide semiconductor technology, which exhibits a number of favorable properties when compared to the silicon standard.
Silicon vs Silicon Carbide Semiconductor Technology
Silicon carbide semiconductor technology is transforming power electronics by delivering higher efficiency, greater power density, and superior thermal performance compared to traditional silicon. As designers push for more compact and efficient electronic systems, understanding silicon carbide (SiC) technology becomes critical for selecting the right components for demanding applications. The significance of SiC can be best appreciated by comparing it with silicon for important semiconductor properties, as shown below.
| Silicon vs Silicon Carbide Semiconductor Technology Comparison | |||
| Component Property | Silicon (Si) | Silicon Carbide (SiC) | SiC Advantage Factor |
| Bandgap | 1.12 eV | 3.26 eV | 3x wider |
| Breakdown Field | 0.6 MV/cm | 6.0 MV/cm | 10x higher |
| Maximum Voltage | 600V | 6,000V+ | 10x higher |
| Thermal Conductivity | 150 W/m·K | 490 W/m·K | 3.3x better |
| Operating Temperature | 150°C max | 200°C+ | Higher range |
| Switching Speed | Standard | 5-10x faster | Superior |
| Power Density | Baseline | 3-5x higher | Compact designs |
| Energy Losses | Standard | 50-80% lower | Higher efficiency |
Data compiled from multiple semiconductor manufacturer specifications and industry studies.
As shown in the table above, SiC semiconductor properties make this material especially applicable for power electronics applications.
Silicon Carbide Power Electronics Application
Silicon carbide’s crystal structure creates a wider bandgap than silicon, fundamentally changing how the material behaves electrically. This 3.26 eV bandgap enables SiC devices to withstand electric fields 10 times stronger than silicon before breakdown occurs. The material’s superior thermal properties allow SiC semiconductors to operate efficiently at temperatures exceeding 200°C, where silicon devices would fail. Combined with thermal conductivity 3.3 times higher than silicon, SiC devices dissipate heat more effectively, enabling smaller heatsinks and more compact designs.
Key Silicon Carbide Semiconductor Technology Advantages:
- Higher breakdown voltage: Up to 10,000V capability vs. 600V for silicon
- Faster switching: Rise and fall times measured in nanoseconds
- Lower on-resistance: Reduced conduction losses at high voltages
- Reduced reverse leakage: Minimal current flow when blocking voltage
The global silicon carbide semiconductor market reached $2.94 billion in 2024, and the projected growth is expected to climb to nearly $25 billion over the decade. The sectors that have benefited the most from this growth are:
| Primary Silicon Carbide Semiconductor Technology Sectors | |||
| Sector | Market Share | Key Applications | Growth Driver |
| Automotive | 45% | EV inverters, onboard chargers | Electrification mandate |
| Renewable Energy | 25% | Solar inverters, wind power | Clean energy transition |
| Industrial Power | 20% | Motor drives, power supplies | Efficiency regulations |
| Grid Infrastructure | 10% | Smart grid, HVDC transmission | Grid modernization |
This growth has been driven by forward-looking companies like SMC Diode Solutions.
SMC Diodes Solutions SiC Innovations
In the market, you will find many manufacturers who use SiC in their products. One of them is SMC Diodes Solutions, which produces semiconductor wafers based on silicon carbide. It is from these that SiC Schottky diodes are made, which represent a very attractive portfolio of semiconductor products from the manufacturer. These products, which are available in the TME catalog, exhibit high operating voltage, high current, small connector capacitance, and fast switching.
SMC diodes include components designed for through-hole mounting in popular package types like TO-247 and TO-220 (also in insulated versions). Surface-mount technology (SMT) diodes are also available. These include the DPAK and D2PAK packages, and in the case of SMC-branded diodes, the small DFN (Dual-Flat No-leads) with dimensions of 8 x 8mm and a thickness of 0.85mm. Additionally, the miniature SOD123F enclosure (dimensions approx. 0.08 x 0.15mm) with flat leads is also available.
Diodes are characterized by low voltage drop in the conduction direction and minimal reverse current. The use of silicon carbide enables these diodes to operate over a very wide temperature range from -55°C to 175°C. Additional important features are fast switching and very low energy loss at high signal frequencies. An example is the S4D02120F-SMC, shown below, which has a maximum reverse voltage of 1.2kV.
SS4D02120F-SMC silicon carbide semiconductor technology diode from SMC Diode Solutions
The utilization of silicon carbide semiconductor technology has allowed SMC to significantly expand its minimization diode and transistor products in the automotive (electric and hybrid vehicles, charging stations), photovoltaics (PV inverters), energy storage, and industrial power supplies (AC/DC and DC/DC Converters).
Designing with SiC Semiconductor Technology Components
Following good design guidelines is essential for semiconductor-based PCB designs. However, implementing SiC devices requires different design approaches compared to standard silicon semiconductors. The higher switching speeds demand careful PCB layout to minimize parasitic inductance and prevent ringing or EMI issues. Critical considerations include the following:
Critical Silicon Carbide Semiconductor Technology Design Considerations:
- Gate drive circuits: You will need to account for higher gate voltage requirements (typically +15V/-5V).
- PCB layout: Use ground planes effectively to minimize loop area.
- Thermal management: Design for higher power densities.
- Protection circuits: Account for faster switching transitions.
Engineers should verify component availability and obtain accurate models when designing with SiC devices. Ultra Librarian is the best source for ensuring manufacturer-vetted, accurate, and industry-standard-compliant CAD models.
If you’re looking for CAD models for common components or advanced products built on materials like silicon carbide semiconductor technology, Ultra Librarian helps by compiling all your sourcing and CAD information in one place.
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Frequently Asked QuestionsQ: Can I directly replace silicon IGBTs with SiC MOSFETs? A: Direct replacement requires design modifications. SiC MOSFETs have different gate drive requirements and faster switching speeds, and they may need different snubber circuits. Always consult device datasheets and consider parasitic effects. Q: What are the main reliability concerns with SiC devices? A: SiC technology has matured significantly, with current devices demonstrating excellent reliability. Key considerations include proper gate oxide stress management and avoiding repetitive avalanche conditions that can cause degradation. Q: How do I handle the faster switching speeds of SiC devices? A: Minimize PCB parasitic inductance through proper layout techniques, use appropriate gate drive circuits with adequate current capability, and implement proper grounding strategies. Consider using ferrite beads for EMI suppression. Q: Are SiC devices suitable for all high-voltage applications? A: While SiC excels in switching applications, consider device costs and availability. For applications below 600V with moderate switching frequencies, silicon devices may still provide better cost-effectiveness. Q: What package options are available for SiC power devices? A: SiC devices come in standard packages like TO220, TO247, and surface-mount options like DPAK, D2PAK. Some manufacturers offer specialized packages optimized for SiC’s thermal and electrical characteristics. |