PFC MOSFET Selection: Si vs. SiC in Toshiba’s Simulator
Active power factor correction (PFC) circuits place demanding electrical and thermal requirements on power metal-oxide-semiconductor field-effect transistors (MOSFETs). Because the switching devices operate continuously at high voltage, losses generated during each switching transition can significantly affect converter efficiency and cooling requirements. Choosing between a silicon (Si) super-junction MOSFET and a silicon carbide (SiC) MOSFET is […]